2SK2847(F) datasheet

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• Маркировка
  2SK2847(F)
• Производитель
  TOSHIBA Semiconductor
• Описание
  TOSHIBA Semiconductor 2SK2847(F) Configuration: Single Continuous Drain Current: 8 A Current - Continuous Drain (id) @ 25?° C: 8A Drain To Source Voltage (vdss): 900V Drain-source Breakdown Voltage: 900 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 58nC @ 10V Gate-source Breakdown Voltage: +/- 30 V Input Capacitance (ciss) @ Vds: 2040pF @ 25V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-16F1B Power - Max: 85W Power Dissipation: 85 W Rds On (max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V Resistance Drain-source Rds (on): 1.4 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA
• Количество страниц
  6 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  413,63 KB

2SK2847(F) datasheet скачать

2SK2847(F) datasheet